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STP35N60M2-EP 数据表(PDF) 1 Page - STMicroelectronics |
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STP35N60M2-EP 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() May 2017 DocID030578 Rev 1 1/14 This is information on a product in full production. www.st.com STP35N60M2-EP N- channel 600 V, 0.110 Ω typ., 26 A MDmesh™ M2 EP Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS @ TJmax RDS(on) max. ID STP35N60M2-EP 650 V 0.130 Ω 26 A Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications Switching applications Tailored for very high-frequency converters (f > 150 kHz) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STP35N60M2-EP 35N60M2EP TO-220 Tube 1 2 3 TO-220 TAB |
类似零件编号 - STP35N60M2-EP |
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类似说明 - STP35N60M2-EP |
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