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STW35N65DM2 数据表(PDF) 5 Page - STMicroelectronics |
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STW35N65DM2 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() 2.1 Electrical characteristics (curves) Figure 1. Safe operating area GADG210720171608SOA 10 2 10 1 10 0 10 -1 10 -1 10 0 10 1 10 2 ID (A) VDS (V) tp = 1 µs tp = 10 µs tp = 100 µs tp = 1 ms tp = 10ms T j ≤150 °C T c = 25°C single pulse Operation in this area is limited by R DS(on) Figure 2. Thermal impedance Figure 3. Output characteristics GIPG110720170910OCH 80 60 40 20 0 0 4 8 12 16 ID (A) VDS (V) VGS =6 V VGS =7 V VGS = 9, 10 V VGS =8 V Figure 4. Transfer characteristics GIPG110720170910TCH 80 60 40 20 0 4 5 6 7 8 ID (A) VGS (V) VDS = 20 V Figure 5. Gate charge vs gate-source voltage GIPG110720170911QVG 12 10 8 6 4 2 0 600 500 400 300 200 100 0 0 10 20 30 40 50 60 VGS (V) VDS (V) Qg (nC) VDD = 520 V ID = 32 A VDS Figure 6. Static drain-source on-resistance GIPG110720170908RID 0.99 0.97 0.95 0.93 0.91 0.89 0.87 0 5 10 15 20 25 30 RDS(on) (Ω) ID (A) VGS = 10 V STW35N65DM2 Electrical characteristics (curves) DS12247 - Rev 3 page 5/12 |
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