STW35N65DM2 datasheet(4/12 Pages) STMICROELECTRONICS

部件名	STW35N65DM2

功能描述	N-channel 650 V, 93 m typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM (1)

Source-drain current (pulsed)

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 32 A

1.6

trr

Reverse recovery time

ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

100

Qrr

Reverse recovery charge

0.42

µC

IRRM

Reverse recovery current

8.4

trr

Reverse recovery time

ISD = 32 A, di/dt = 100 A/µs,

VDD = 60 V, TJ = 150 °C

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

205

Qrr

Reverse recovery charge

1.8

µC

IRRM

Reverse recovery current

17.6

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

STW35N65DM2

Electrical characteristics

DS12247 - Rev 3

page 4/12

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