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STWA63N65DM2 数据表(PDF) 1 Page - STMicroelectronics |
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STWA63N65DM2 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() D(2) G(1) S(3) AM01476v1_No_tab Features Order code VDS RDS(on) max. ID PTOT STWA63N65DM2 650 V 0.050 Ω 60 A 446 W • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STWA63N65DM2 Product summary Order code STWA63N65DM2 Marking 63N65DM2 Package TO-247 long leads Packing Tube N-channel 650 V, 0.042 Ω typ., 60 A MDmesh™ DM2 Power MOSFET in a TO-247 long leads package STWA63N65DM2 Datasheet DS12555 - Rev 1 - April 2018 For further information contact your local STMicroelectronics sales office. www.st.com |
类似零件编号 - STWA63N65DM2 |
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类似说明 - STWA63N65DM2 |
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