STWA63N65DM2 datasheet(3/12 Pages) STMICROELECTRONICS

3 / 12 page

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 650 V

µA

VGS = 0 V, VDS = 650 V,

Tcase = 125 °C(1)

100

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 30 A

0.042

0.050

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

5500

Coss

Output capacitance

210

Crss

Reverse transfer capacitance

Coss eq. (1)

Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V

456

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

3.3

Total gate charge

VDD = 520 V, ID = 60 A, VGS = 0 to

10 V (see Figure 14. Test circuit for

gate charge behavior)

120

Qgs

Gate-source charge

Qgd

Gate-drain charge

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 30 A RG = 4.7 Ω,

VGS = 10 V (see Figure 13. Test

circuit for resistive load switching

times and Figure 18. Switching time

waveform)

Rise time

13.5

td(off)

Turn-off delay time

114

Fall time

11.5

STWA63N65DM2

Electrical characteristics

DS12555 - Rev 1

page 3/12

STWA63N65DM2 数据表(PDF) 3 Page - STMicroelectronics

STWA63N65DM2 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载

链接网址

STWA63N65DM2 数据表(PDF) 3 Page - STMicroelectronics

STWA63N65DM2 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表 下载

链接网址

数据表下载