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STWA68N65DM6 数据表(PDF) 6 Page - STMicroelectronics

部件名 STWA68N65DM6
功能描述  N-channel 650 V, 51 m typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 long leads package
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STWA68N65DM6 数据表(HTML) 6 Page - STMicroelectronics

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Figure 7. Typical capacitance characteristics
GADG060520201021CVR
10 4
10 3
10 2
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
Ciss
Co ss
Cr ss
f = 1 MHz
Figure 8. Typical output capacitance stored energy
GADG060520201022EOS
30
20
10
0
0
100 200 300 400 500 600
VDS (V)
Figure 9. Normalized gate threshold vs temperature
GADG060520201018VTH
1.1
1.0
0.9
0.8
0.7
0.6
-75
-25
25
75
125
VGS(th)
(norm.)
TJ (°C)
ID = 250 μA
Figure 10. Normalized on-resistance vs. temperature
GADG060520201019RON
2.2
1.8
1.4
1.0
0.6
0.2
-75
-25
25
75
125
RDS(on)
(norm.)
VGS = 10 V
TJ (°C)
Figure 11. Normalized breakdown voltage vs temperature
GADG060520201020BDV
1.08
1.04
1.00
0.96
0.92
0.88
-75
-25
25
75
125
V(BR)DSS
(norm.)
ID = 1 mA
TJ (°C)
Figure 12. Typical reverse diode forward characteristics
GADG060520201020SDF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
10
20
30
40
VSD
(V)
ISD (A)
TJ = -50 °C
TJ = 25 °C
TJ = 150 °C
STWA68N65DM6
Electrical characteristics (curves)
DS12367 - Rev 3
page 6/12



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