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STWA68N65DM6 数据表(PDF) 1 Page - STMicroelectronics |
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STWA68N65DM6 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() TO-247 long leads D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max ID STWA68N65DM6 650 V 59 mΩ 55 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STWA68N65DM6 Product summary Order code STWA68N65DM6 Marking 68N65DM6 Package TO-247 long leads Packing Tube N-channel 650 V, 51 mΩ typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 long leads package STWA68N65DM6 Datasheet DS12367 - Rev 3 - May 2021 For further information contact your local STMicroelectronics sales office. www.st.com |
类似零件编号 - STWA68N65DM6 |
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类似说明 - STWA68N65DM6 |
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