STF18N60DM2 datasheet(6/12 Pages) STMICROELECTRONICS

部件名	STF18N60DM2

功能描述	N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP package

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

6 / 12 page

Figure 7. Capacitance variations

GIPG250320151620ALS

10 3

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

V DS (V)

C ISS

C OSS

C RSS

f = 1 MHz

Figure 8. Normalized gate threshold voltage vs

temperature

GIPG250320151515ALS

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

V GS(th)

(norm.)

T j (°C)

I D = 250 μA

Figure 9. Normalized on-resistance vs temperature

GIPG250320151534ALS

2.2

1.8

1.4

1.0

0.6

0.2

-75

-25

125

R DS(on)

(norm.)

T j (°C)

V GS = 10 V

Figure 10. Normalized V(BR)DSS vs temperature

GIPG250320151522ALS

1.08

1.04

1.00

0.96

0.92

0.88

-75

-25

125

V (BR)DSS

(norm.)

T j (°C)

I D = 1 mA

Figure 11. Source-drain diode forward characteristics

GIPG250320151630ALS

1.1

1.0

0.9

0.8

0.7

0.6

0.5

V SD

(V)

I SD (A)

T j = -50 °C

T j = 25 °C

T j = 150 °C

Figure 12. Output capacitance stored energy

GIPD280120161127EOS

100 200 300 400 500 600

E OSS

(µJ)

V DS (V)

STF18N60DM2

Electrical characteristics (curves)

DS10966 - Rev 5

page 6/12

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