STF26N65DM2 datasheet(2/13 Pages) STMICROELECTRONICS

2 / 13 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

ID(1)

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

12.6

IDM(2)

Drain current (pulsed)

PTOT

Total dissipation at Tcase = 25 °C

dv/dt(3)

Peak diode recovery voltage slope

V/ns

dv/dt(4)

MOSFET dv/dt ruggedness

VISO

Insulation withstand voltage (RMS) from all three leads to external heatsink

(t = 1 s, TC = 25 °C)

2500

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Limited by maximum junction temperature

2. Pulse width is limited by safe operating area.

3. ISD ≤ 20 A, di/dt=900 A/μs, VDS peak < V(BR)DSS, VDD = 400 V

4. VDS ≤ 520 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

4.2

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

EAS(2)

Single pulse avalanche energy

530

1. Pulse width is limited by TJmax.

2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V

STF26N65DM2

Electrical ratings

DS12426 - Rev 2

page 2/13

STF26N65DM2 数据表(PDF) 2 Page - STMicroelectronics

STF26N65DM2 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载

链接网址

STF26N65DM2 数据表(PDF) 2 Page - STMicroelectronics

STF26N65DM2 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表 下载

链接网址

数据表下载