STF26N65DM2 datasheet(3/13 Pages) STMICROELECTRONICS

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Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 650 V

µA

VGS = 0 V, VDS = 650 V,

Tcase = 125 °C(1)

100

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 10 A

0.156

0.190

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz, VGS = 0 V

1480

Coss

Output capacitance

Crss

Reverse transfer capacitance

Coss eq.(1)

Equivalent output capacitance

VDS = 0 to 520 V, VGS = 0 V

140

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

4.6

Total gate charge

VDD = 520 V, ID = 20 A,

VGS = 0 to 10 V

(see Figure 14. Test circuit for gate

charge behavior)

35.5

Qgs

Gate-source charge

8.2

Qgd

Gate-drain charge

17.6

1. Coss eq. is defined as the constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDSS.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 10 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit for

resistive load switching times and

Figure 18. Switching time

waveform)

Rise time

td(off)

Turn-off delay time

Fall time

STF26N65DM2

Electrical characteristics

DS12426 - Rev 2

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