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DLLFSD01LP3 数据表(PDF) 2 Page - Diodes Incorporated |
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DLLFSD01LP3 数据表(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() DLLFSD01LP3 Document number: DS36669 Rev. 6 - 2 2 of 5 www.diodes.com May 2015 © Diodes Incorporated DLLFSD01LP3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 85 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 80 V RMS Reverse Voltage VR(RMS) 57 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 100 mA Non-Repetitive Peak Forward Surge Current @t = 1.0µs IFSM 2.0 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 200 mW Thermal Resistance Junction to Ambient Air (Note 5) RθJA 500 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V(BR)R 80 — — V IR = 100µA Forward Voltage VF — — — 0.62 0.74 0.94 0.7 0.82 1.20 V IF = 1.0mA IF = 10mA IF = 100mA Leakage Current (Note 6) IR — — — 5 — — 10.0 0.1 0.2 nA µA µA VR = 5V VR = 30V VR = 80V Total Capacitance CT — 0.5 2.5 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr — — — — 4.0 4.0 ns ns IF = 10mA, VR = 6V IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. T , AMBIENT TEMPERATURE (°C) Figure 1 Power Derating Curve, Total Package A 0 50 100 150 200 250 300 0 25 50 75 100 125 150 Note 5 V , INSTANTANEOUS FORWARD VOLTAGE (mV) F Figure 2 Typical Forward Characteristics 0.01 0.1 1 10 100 1000 0 200 400 600 800 1000 1200 1400 T = 25°C A T = 85°C A T = 125°C A T = 150°C A T = -55°C A |
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