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STB19NF20 数据表(PDF) 2 Page - STMicroelectronics

部件名 STB19NF20
功能描述  N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY™ Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages
PDF  30 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB19NF20 数据表(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK, DPAK,
TO-220
TO-220FP
VDS
Drain-source voltage
200
VGS
Gate-source voltage
±20
V
ID
Drain current (continuous) at TC = 25 °C
15
15(1)
A
Drain current (continuous) at TC = 100 °C
9.45
9.45(1)
IDM(2)
Drain current (pulsed)
60
60(1)
A
PTOT
Total dissipation at Tcase = 25 °C
90
25
W
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s, TC = 25 °C)
2.5
kV
dv/dt(3)
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature range
-55 to 150
°C
Tj
Operating junction temperature range
1. This value is limited by package.
2. Pulse width is limited by safe operating area.
3. ISD ≤ 15 A, di/dt ≤ 300 A/μs, VDD = 80 % V(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Value
Unit
D²PAK
DPAK
TO-220
TO-220FP
Rthj-case
Thermal resistance junction-case
1.39
5
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb
35
50
Rthj-amb
Thermal resistance junction-ambient
62.5
1. When mounted on an 1-inch² FR-4, 2oz Cu board
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
15
A
EAS
Single-pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
110
mJ
STB19NF20,STD19NF20,STF19NF20,STP19NF20
Electrical ratings
DS4935 - Rev 7
page 2/30



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