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STB19NF20 数据表(PDF) 4 Page - STMicroelectronics |
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STB19NF20 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 30 page ![]() Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time ISD = 15 A, di/dt = 100 A/µs, VDD = 50 V (see Figure 17. Test circuit for inductive load switching and diode recovery times) - 125 ns Qrr Reverse recovery charge - 0.55 µC IRRM Reverse recovery current - 8.8 A trr Reverse recovery time ISD = 15 A, di/dt = 100 A/µs, VDD = 50 V, Tj = 150 °C (see Figure 17. Test circuit for inductive load switching and diode recovery times) - 148 ns Qrr Reverse recovery charge - 0.73 µC IRRM Reverse recovery current - 9.9 A 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. STB19NF20,STD19NF20,STF19NF20,STP19NF20 Electrical characteristics DS4935 - Rev 7 page 4/30 |
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