Features

VCBO

IC(max.)

HFE at 0.6 V,

250 mA

Tj(max.)

300 V

5 A

> 55

200 °C

•

100 krad

•

Linear gain characteristics

•

Inductive load ruggedness

Description

The 2ST15300 is a power bipolar transistor able to operate under severe

environment conditions and radiation exposure. It offers high reliability performance

and immunity to the total ionizing dose (TID) up to 100 krad.

Qualified as per 5201/020 ESCC specification and available in SMD.5 hermetic

package, it is specifically recommended for space and harsh environment

applications and suitable for satellite electrical propulsion, inductive load switches

and linear amplifiers.

In case of discrepancies between this datasheet and the relevant agency

specification, the latter takes precedence.

SMD.5

3

2

1

E

DS10450

C

B

(3)

(1)

(2)

Product status link

2ST15300

Rad-Hard 300 V, 5 A NPN bipolar transistor

2ST15300

Datasheet

DS13014 - Rev 6 - October 2022

For further information contact your local STMicroelectronics sales office.

www.st.com