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Radiation hardness assurance

This products is guaranteed in radiation as per ESCC 22900 and in compliance with ESCC 5201/020

specification. Each lot is tested in radiation according to the following procedure:

•

Standard dose rate window (typical at 0.1 rad / sec.)

•

Test of 11 samples (5 biased at 80% of BVceo, 5 unbiased and 1 for reference)

•

Acceptance criteria in compliance with the post radiation electrical characteristics as per Table 4.

Table 4. ESCC 5201/020 post radiation electrical characteristics (Tamb = 25 °C unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Max.

Unit

ICBO

Collector-base cut-off current

(IE = 0)

VCB = 240 V

10

µA

IEBO

Emitter-base cut-off current

(IC = 0)

VEB = 6 V

50

µA

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = 10 mA

240

V

V(BR)CEO (1)

Collector-emitter breakdown

voltage (IB = 0)

IC = 10 mA

100

V

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 10 μA

6

V

VCE(sat) (1)

Collector-emitter saturation

voltage

IC = 5 A, IB = 1 A

0.7

V

VBE(sat) (1)

Base-emitter saturation

voltage

IC = 5 A, IB = 1 A

1.4

V

[hFE]

Post irradiation gain

calculation(2)

IC = 50 mA, VCE = 0.6 V

[25]

IC = 250 mA, VCE =0.6 V

[27.5]

IC = 5 A, VCE = 5 V

[27.5]

IC = 5 A, VCE = 5 V

[17.5]

1. Pulse test: pulse duration ≤ 300 μs, duty cycle ≤ 2%.

2. The post-irradiation gain calculation [hFE] is made according to MILSTD-750 test method 1019.

2ST15300

Radiation hardness assurance

DS13014 - Rev 6

page 4/9