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JS2907 数据表(PDF) 1 Page - STMicroelectronics

部件名 JS2907
功能描述  Rad-hard 60 V, 0.6 A PNP transistor
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

JS2907 数据表(HTML) 1 Page - STMicroelectronics

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LCC-3
UB
3
1
2
3
1
2
4
Pin 4 in UB is connected to the metallic lid.
E
DS10460
C
B
(3)
(2)
(1)
Features
VCBO
IC(max.)
HFE at 10 V,
150 mA
Tj(max.)
60 V
ESCC
0.5 A
> 100
200 °C
Hermetic packages
ESCC qualified
100 krad
Description
The 2N2907AHR is a bipolar transistor able to operate under severe environment
conditions and radiation exposure providing high immunity to total ionizing dose
(TID).
Qualified as per ESCC 5202/001 specification and available in LCC-3 and
UB hermetic packages, it is specifically recommended for space and harsh
environment applications and suitable for low current and high precision circuits such
preamplifiers, oscillators, current mirror configuration.
In case of discrepancies between this datasheet and the relevant agency
specification, the latter takes precedence.
Product summary
Product summary
Part-number
Qualification
system
Agency
specification
Package
Radiation
level
2N2907ARUBx
ESCC Flight
5202/001
UB
100 krad
2N2907AUBx
ESCC Flight
5202/001
UB
-
SOC2907ARHRx
ESCC Flight
5202/001
LCC-3
100 krad
SOC2907AHRx
ESCC Flight
5202/001
LCC-3
-
Note:
See Table 7 for ordering information.
Product status link
2N2907AHR
Rad-hard 60 V, 0.6 A PNP transistor
2N2907AHR
Datasheet
DS6095 - Rev 14 - February 2022
For further information contact your local STMicroelectronics sales office.
www.st.com


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