2.2

Radiation assurance

Radiation test are guaranteed in compliance with ESCC 22900 and ESCC 5202/001 specifications.

Each lot is tested in radiation according to the following procedure:

•

Radiation condition of 0.1 rad (Si)/s.

•

Test of 11 samples by wafer, 5 biased at 80% of V(BR)CEO, 5 unbiased and for reference.

•

Acceptance criteria in compliance with the post radiation electrical characteristics as per Table 4.

Table 4. ESCC 5202/001 post radiation electrical characteristics (Tamb = 25 °C unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

ICBO

Collector cut-off current (IE = 0)

VCB = 50 V

-

10

nA

ICEX

Collector-emitter cut-off current

VCE = 30 V, VBE = -0.5 V

-

50

nA

V(BR)CBO

Collector-base breakdown voltage (IE= 0)

IC =10 μA

60

-

V

V(BR)CEO(1)

Collector-emitter breakdown voltage (IB = 0)

IC = 10 mA

60

V

V(BR)EBO

Emitter-base breakdown voltage (IC= 0)

IE = 10 μA

5

-

V

VCE(sat)(1)

Collector-emitter saturation voltage

IC =150 mA, IB = 15 mA

-

0.4

V

VBE(sat)(1)

Base-emitter saturation voltage

IC = 150 mA, IB = 15 mA

-

1.3

V

[hFE](1)

Post irradiation gain calculation (2)

IC = 0.1 mA, VCE = 10 V

[30]

-

IC = 10 mA, VCE = 10 V

[50]

-

IC = 150 mA, VCE = 10 V

[50]

-

300

IC= 500 mA, VCE= 10 V

[25]

-

1. Pulsed duration = 300 μs, duty cycle ≥ 2 %

2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation

testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019.

2N2907AHR

Radiation assurance

DS6095 - Rev 14

page 4/14