May 2017

DocID028259 Rev 3

1/15

This is information on a product in full production.

www.st.com

STL36DN6F7

Dual N-

channel 60 V, 23 mΩ typ., 33 A STripFET™ F7

Power MOSFET in a PowerFLAT™ 5x6 double island package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max

ID

STL36DN6F7

60 V

27 mΩ

33 A



Among the lowest RDS(on) on the market



Excellent figure of merit (FoM)



Low Crss/Ciss ratio for EMI immunity



High avalanche ruggedness

Applications



Switching applications

Description

This dual N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Table 1: Device summary

Order code

Marking

Package

Packing

STL36DN6F7

36DN6F7

PowerFLAT™ 5x6 double island

Tape and reel