Electrical characteristics

STL36DN6F7

4/15

DocID028259 Rev 3

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS= 0 V, ID = 1 mA

60

V

IDSS

Zero gate voltage drain

current

VDS = 60 V, VGS = 0 V

1

µA

IGSS

Gate-body leakage

current

VDS = 0 V ,VGS = 20 V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID

= 250 μA

2

4

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 4.5 A

23

27

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 30 V, f = 1 MHz,

VGS = 0 V

-

420

-

pF

Coss

Output capacitance

-

215

-

pF

Crss

Reverse transfer capacitance

-

16

-

pF

Qg

Total gate charge

VDD = 30 V, ID= 9 A

VGS = 0 to 10 V

(see Figure 14: "Test circuit

for gate charge behavior")

-

8

-

nC

Qgs

Gate-source charge

-

2.3

-

nC

Qgd

Gate-drain charge

-

2.1

-

nC

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 4.5 A,

RG

= 4.7 Ω, VGS = 10 V

(see Figure 13: "Test circuit

for resistive load switching

times" and Figure 18:

"Switching time waveform")

-

7.85

-

ns

tr

Rise time

-

3.25

-

ns

td(off)

Turn-off delay time

-

12.1

-

ns

tf

Fall time

-

3.95

-

ns

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD(1)

Forward on voltage

ISD = 9 A, VGS = 0 V

-

1.2

V

trr

Reverse recovery time

ID = 9 A, di/dt = 100 A/µs

VDD = 48 V

(see Figure 15: "Test circuit

for inductive load switching

and diode recovery times")

-

17.1

ns

Qrr

Reverse recovery charge

-

6.67

nC

IRRM

Reverse recovery current

-

0.8

A

Notes:

(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.