TCST1103, TCST1202, TCST1300

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Vishay Semiconductors

Rev. 2.0, 24-Aug-11

2

Document Number: 83764

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ABSOLUTE MAXIMUM RATINGS

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

INPUT (EMITTER)

Reverse voltage

VR

6V

Forward current

IF

60

mA

Forward surge current

tp

≤ 10 μs

IFSM

3A

Power dissipation

Tamb

≤ 25 °C

PV

100

mW

Junction temperature

Tj

100

°C

OUTPUT (DETECTOR)

Collector emitter voltage

VCEO

70

V

Emitter collector voltage

VECO

7V

Collector peak current

tp/T = 0.5, tp

≤ 10 ms

ICM

200

mA

Power dissipation

Tamb

≤ 25 °C

PV

150

mW

Junction temperature

Tj

100

°C

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

0

0

100

200

300

400

95 11088

Tamb - Ambient Temperature (°C)

Coupled device

Phototransistor

IR-diode

150

120

90

60

30

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

COUPLER

Current transfer ratio

VCE = 5 V, IF = 20 mA

TCST1103

CTR

10

20

%

TCST1202

CTR

5

10

%

TCST1300

CTR

1.25

2.5

%

Collector current

VCE = 5 V, IF = 20 mA

TCST1103

IC

24

mA

TCST1202

IC

12

mA

TCST1300

IC

0.25

0.5

mA

Collector emitter saturation

voltage

IF = 20 mA, IC = 1 mA

TCST1103

VCEsat

0.4

V

IF = 20 mA, IC = 0.5 mA

TCST1202

VCEsat

0.4

V

IF = 20 mA, IC = 0.1 mA

TCST1300

VCEsat

0.4

V

Resolution, path of the shutter

crossing the radiant sensitive

zone

ICrel = 10 % to 90 %

TCST1103

s

0.6

mm

TCST1202

s

0.4

mm

TCST1300

s

0.2

mm