TCST1103, TCST1202, TCST1300

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Vishay Semiconductors

Rev. 2.0, 24-Aug-11

3

Document Number: 83764

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Fig. 2 - Test Circuit for ton and toff

Fig. 3 - Switching Times

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 4 - Forward Current vs. Forward Voltage

Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature

INPUT (EMITTER)

Forward voltage

IF = 60 mA

VF

1.25

1.6

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

50

pF

OUTPUT (DETECTOR)

Collector emitter voltage

IC = 1 mA

VCEO

70

V

Emitter collector voltage

IE = 10 μA

VECO

7V

Collector dark current

VCE = 25 V, IF = 0 A, E = 0 lx

ICEO

100

nA

SWITCHING CHARACTERISTICS

Turn-on time

IC = 2 mA, VS = 5 V,

RL = 100

Ω (see figure 2)

ton

10

μs

Turn-off time

IC = 2 mA, VS = 5 V,

RL = 100

Ω (see figure 2)

toff

8μs

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Channel I

Channel II

20688

+ 5 V

IC

adjusted by IF

IF

0

IF

R G = 50 Ω

tp

tp = 1 ms

T

= 20

Oscilloscope

50

Ω

100

Ω

R L ≥ 1 MΩ

C L ≤ 20 pF

t p

t

t

0

0

10 %

90 %

100 %

t r

t d

t on

t s

t f

t off

I F

IC

tp

Pulse duration

td

Delay time

tr

Rise time

ton (= td + tr)

Turn-on time

ts

Storage time

t f

Fall time

t

off (= ts + tf)

Turn-off time

96 11698

0.1

1

10

100

1000

0

VF - Forward Voltage (V)

96 11862

1.6

1.2

0.8

0.4

2.0

- 25

0

0.5

1.0

1.5

2.0

Tamb - Ambient Temperature (°C)

95 11089

VCE = 5 V

IF = 20 mA

100

75

50

25

0