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STI100N10F7 数据表(PDF) 8 Page - STMicroelectronics

部件名 STI100N10F7
功能描述  N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
PDF  28 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STI100N10F7 数据表(HTML) 8 Page - STMicroelectronics

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3
Test circuits
Figure 16. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200
μF
VDD
3.3
μF
+
pulse width
VGS
Figure 17. Test circuit for gate charge behavior
AM01469v1
47 kΩ
1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST
100 Ω
100 nF
D.U.T.
+
pulse width
VGS
2200
μF
VG
VDD
Figure 18. Test circuit for inductive load switching and
diode recovery times
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
A
A
B
B
RG
G
D
S
100 µH
µF
3.3
1000
µF
VDD
D.U.T.
+
_
+
fast
diode
Figure 19. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD
+
pulse width
Vi
3.3
µF
2200
µF
Figure 20. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
Figure 21. Switching time waveform
AM01473v1
0
VGS
90%
VDS
90%
10%
90%
10%
10%
ton
td(on)
tr
0
toff
td(off)
tf
STB100N10F7,STD100N10F7,STF100N10F7,STI100N10F7,STP100N10F7
Test circuits
DS9291 - Rev 5
page 8/28



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