STI100N10F7 datasheet(2/28 Pages) STMICROELECTRONICS

部件名	STI100N10F7

功能描述	N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

PDF	28 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 28 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

DPAK

TO-220FP

TO-220

D2PAK

I2PAK

VDS

Drain-source voltage

100

VGS

Gate-source voltage

±20

Drain current (continuous) at TC = 25 °C

45(1)

Drain current (continuous) at TC = 100 °C

32(1)

IDM(2)

Drain current (pulsed)

320

180

320

PTOT(1)

Total dissipation at TC = 25 °C

120

150

VISO

Insulation withstand voltage (RMS) from all

three leads to external heatsink

(t = 1 s, TC = 25 °C)

2.5

Operating junction temperature

-55 to 175

°C

Tstg

Storage temperature range

°C

1. This value is limited by package.

2. Pulse width is limited by safe operating area.

Table 2. Thermal resistance

Symbol

Parameter

Value

Unit

D2PAK

DPAK

TO-220FP

TO-220

I2PAK

Rthj-case

Thermal resistance junction-case

1.25

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

°C/W

1. When mounted on an 1-inch2 FR-4 board, 2oz CU, t < 10 s.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

EAS

Single pulse avalanche energy

(TJ = 25 °C, L = 3.5 mH, IAS = 15 A, VDD = 50 V, VGS = 10 V)

400

STB100N10F7,STD100N10F7,STF100N10F7,STI100N10F7,STP100N10F7

Electrical ratings

DS9291 - Rev 5

page 2/28

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