1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

V

ID

Drain current (continuous) at TC = 25 °C

13

A

ID

Drain current (continuous) at TC = 100 °C

8

A

IDM (1)

Drain current (pulsed)

52

A

PTOT

Total power dissipation at TC = 25 °C

110

W

dv/dt (2)

Peak diode recovery voltage slope

15

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

50

V/ns

Tstg

Storage temperature range

- 55 to 150

°C

Tj

Operating junction temperature range

1. Pulse width limited by safe operating area.

2. ISD ≤ 13 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V.

3. VDS ≤ 480 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

I2PAK

TO-220

TO-247

Rthj-case

Thermal resistance junction-case

1.14

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

50

°C/W

Rthj-pcb (1)

Thermal resistance junction-pcb

30

°C/W

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

3

A

EAS

Single pulse avalanche energy (starting Tj = 25°C, ID = IAR; VDD = 50 V)

135

mJ

STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2

Electrical ratings

DS9714 - Rev 4

page 2/27