STP18N60M2 datasheet(4/27 Pages) STMICROELECTRONICS

部件名	STP18N60M2

功能描述	N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages

PDF	27 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM (1)

Source-drain current (pulsed)

VSD (2)

Forward on voltage

ISD = 13 A, VGS = 0 V

1.6

trr

Reverse recovery time

ISD = 13 A, di/dt = 100 A/µs

VDD = 60 V (see

Figure 15. Test circuit for

inductive load switching and

diode recovery times)

305

Qrr

Reverse recovery charge

3.3

µC

IRRM

Reverse recovery current

trr

Reverse recovery time

ISD = 13 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 15. Test circuit for

inductive load switching and

diode recovery times)

417

Qrr

Reverse recovery charge

4.6

µC

IRRM

Reverse recovery current

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

STB18N60M2, STI18N60M2, STP18N60M2, STW18N60M2

Electrical characteristics

DS9714 - Rev 4

page 4/27

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