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STGD3HF60WD 数据表(PDF) 2 Page - STMicroelectronics |
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STGD3HF60WD 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() Electrical ratings STGD3HF60WD 2/10 Doc ID 16582 Rev 1 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC (1) 1. Calculated according to the iterative formula: Continuous collector current at TC = 25 °C TBD A IC (1) Continuous collector current at TC = 100 °C TBD A ICL (2) 2. Vclamp = 80%,(VCES), Tj =150°C, RG = 10 Ω, VGE = 15 V Turn-off latching current TBD A ICP (3) 3. Pulse width limited by maximum junction temperature and turn-off within RBSOA Pulsed collector current TBD A VGE Gate-emitter voltage ±20 V IF Diode RMS forward current at TC = 25 °C 10 A IFSM Surge non repetitive forward current tp=10ms sinusoidal 25 A PTOT Total dissipation at TC = 25 °C TBD W Tj Operating junction temperature – 55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case IGBT TBD °C/W Thermal resistance junction-case diode TBD °C/W Rthj-amb Thermal resistance junction-ambient 100 °C/W I C TC () T jmax () TC – R thj c – V CE sat () max () Tjmax () IC TC () , () × ---------------------------------------------------------------------------------------------------------- = |
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