Electrical characteristics

STGD3HF60WD

4/10

Doc ID 16582 Rev 1

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 1.5 A

RG= 10 Ω, VGE = 15 V

(see Figure 4)

-

TBD

TBD

TBD

-

ns

ns

A/µs

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 1.5 A

RG = 10 Ω, VGE = 15 V,

Tj =125 °C (see Figure 4)

-

TBD

TBD

TBD

-

ns

ns

A/µs

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 390 V, IC = 1.5 A,

RGE = 10 Ω, VGE = 15 V

(see Figure 4)

-

TBD

TBD

TBD

-

ns

ns

ns

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 390 V, IC = 1.5 A,

RGE = 10 Ω, VGE =15 V,

Tj = 125 °C (see Figure 4)

-

TBD

TBD

TBD

-

ns

ns

ns

Table 7.

Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon

(1)

Eoff

(2)

Ets

1.

Eon is the turn-on losses when a typical diode is used in the test circuit in

(see Figure 5). If the IGBT is

offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode

are at the same temperature (25°C and 125°C)

2.

Turn-off losses include also the tail of the collector current

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 390 V, IC = 1.5 A

RG = 10 Ω, VGE=15 V

(see Figure 4)

-

12

30

42

-

µJ

µJ

µJ

Eon

(1)

Eoff

(2)

Ets

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 390 V, IC = 1.5 A

RG = 10 Ω, VGE = 15 V,

Tj = 125 °C (see Figure 4)

-

20

40

60

-

µJ

µJ

µJ

Table 8.

Collector-emitter diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VF

Forward on-voltage

IF = 1.5 A

IF = 1.5 A, Tj=125 °C

-

1.4

1.15

1.8

V

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 1.5 A, VR = 40 V,

di/dt = 100 A/

µs

(see Figure 5)

-

TBD

TBD

TBD

ns

nC

A

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 1.5 A,VR = 40 V,

Tj =125 °C, di/dt = 100 A/µs

(see Figure 5)

-

TBD

TBD

TBD

ns

nC

A