STP9NM60 / STD9NM60 / STD9NM60-1

2/9

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(1) ISD ≤7A, di/dt ≤400 µA, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

THERMAL DATA

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

600

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at TC =25°C

8.3

A

ID

Drain Current (continuous) at TC = 100°C

5.2

A

IDM ( )

Drain Current (pulsed)

33.2

A

PTOT

Total Dissipation at TC =25°C

100

W

Derating Factor

0.8

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

15

V/ns

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-65 to 150

°C

TO-220

DPAK

IPAK

Rthj-case

Thermal Resistance Junction-case Max

1.25

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

100

°C/W

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

3.5

A

EAS

Single Pulse Avalanche Energy

(starting Tj =25 °C, ID =IAR,VDD =50 V)

TBD

mJ