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STP9NM60 / STD9NM60 / STD9NM60-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

600

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS =Max Rating,TC = 125 °C

1

10

µA

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =± 20V

±5

µA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250µA

345

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 3.5 A

0.55

0.60

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =15V, ID =4.1 A

TBD

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS =25V,f= 1MHz,VGS = 0

580

160

20

pF

pF

pF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD =300 V, ID =4.1 A

RG =4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

TBD

TBD

ns

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =480 V, ID =8.3 A,

VGS =10 V

22

TBD

TBD

30

nC

nC

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD =480 V, ID =8.3 A,

RG =4.7Ω, VGS = 10V

(Inductive Load see, Figure 5)

TBD

TBD

TBD

ns

ns

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

TBD

TBD

A

A

VSD (1)

ForwardOnVoltage

ISD =8.3 A, VGS =0

TBD

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 8.3 A, di/dt = 100A/µs

VDD =100 V, Tj =25°C

(see test circuit, Figure 5)

TBD

TBD

TBD

ns

µC

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 8.3 A, di/dt = 100A/µs

VDD =100 V, Tj =150°C

(see test circuit, Figure 5)

TBD

TBD

TBD

ns

µC

A