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STNRGPF02 数据表(PDF) 26 Page - STMicroelectronics |
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STNRGPF02 数据表(HTML) 26 Page - STMicroelectronics |
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26 / 43 page ![]() Symbol Parameter Test condition Min. Typ.(1) Max.(1) Unit IDD(RUN) Total current consumption VDD/VDDA = 5 V 28 34 mA 1. Test conditions: data based on characterization results not tested in production. Temperature operating: TA = 25 °C.Device in run mode. 5.3.3 Memory characteristics Flash program and memory/data E2PROM. General conditions: TA = -40 °C to 105 °C. Table 9. Flash program memory/data E2PROM Symbol Parameter Conditions Min(1) Typ(1) Max(1) Unit tPROG Standard programming time (including erase) for byte/word/block 6 6.6 ms Fast programming time for 1 block (128 bytes) 3 3.3 tERASE Erase time for 1 block (128 bytes) 3 3.3 NWE Erase/write cycles (2) (program memory) TA = 25°C 10K Cycles Erase/write cycles (2)(data memory) TA = 85°C 100K TA = 105°C 35K tRET Data retention (program memory) after 10K erase/write cycles at TA= 25°C TRET = 85°C 15 Years Data retention (program memory) after 10K erase/write cycles at TA= 25°C TRET = 105°C 11 Data retention (data memory) after 100K erase/write cycles at TA= 85°C TRET = 85°C 15 Data retention (data memory) after 35K erase/write cycles at TA= 105°C TRET = 105°C 6 IDDPRG Supply current during program and erase cycles -40 ºC ≤ TA ≤ 105 ºC 2 mA 1. Data based on characterization results, not tested in production. 2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation addresses a single byte. 5.3.4 Input/output specifications The STNRGPFx2 device includes three different I/O types: • Normal I/Os (O or I); • Fast I/O (OP); • High speed I/O (CLOCK). The STNRGPFx2 I/Os are designed to withstand the current injection. For the negative injection current of 4 mA, the resulting leakage current in the adjacent input does not exceed 1 μA 5.3.5 I/O port pin characteristics Subject to general operating conditions for VDD and TA unless otherwise specified. Unused input pins should not be left floating. STNRGPF02, STNRGPF12 Operating conditions DS12895 - Rev 2 page 26/43 |
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