July 2016

DocID028461 Rev 3

1/16

This is information on a product in full production.

www.st.com

STP9N80K5, STW9N80K5

N-

channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5

Power MOSFETs in a TO-220 and TO-247 packages

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max.

ID

STP9N80K5

800 V

0.90 Ω

7 A

STW9N80K5



Industry’s lowest RDS(on) x area



Industry’s best FoM (figure of merit)



Ultra-low gate charge



100% avalanche tested



Zener-protected

Applications



Switching applications

Description

These very high voltage N-channel Power

MOSFET are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packing

STP9N80K5

9N80K5

TO-220

Tube

STW9N80K5

TO-247

1

2

3

TO-247

1

2

3

TAB

TO-220