STP9N80K5, STW9N80K5

Electrical ratings

DocID028461 Rev 3

3/16

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC= 25 °C

7

A

ID

Drain current (continuous) at TC = 100 °C

4.4

A

ID(1)

Drain current (pulsed)

28

A

PTOT

Total dissipation at TC = 25 °C

110

W

dv/dt (2)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

50

TJ

Operating unction temperature range

- 55 to 150

°C

Tstg

Storage temperature range

Notes:

(1)Pulse width limited by safe operating area.

(2)ISD ≤ 7 A, di/dt≤ 100 A/μs; VDS peak < V(BR)DSS,VDD= 640 V

(3)VDS ≤ 640 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

TO-220

TO-247

Rthj-case

Thermal resistance junction-case

1.14

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

50

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by

Tjmax)

2.4

A

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR,

VDD = 50 V)

200

mJ