January 2018

DocID025864 Rev 3

1/14

This is information on a product in full production.

www.st.com

STS5DP3LLH6

Dual P-channel -

30 V, 48 mΩ typ., -5 A, STripFET™ H6

Power MOSFET in an SO-8 package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS

RDS(on) max

ID

STS10P3LLH6

-30 V

56 mΩ

-5 A



Very low on-resistance



Very low gate charge



High avalanche ruggedness



Low gate drive power loss

Applications



Switching applications

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ H6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all

packages.

Table 1: Device summary

Order code

Marking

Package

Packing

STS5DP3LLH6

5KK3L

SO-8

Tape and reel