Electrical characteristics

STS5DP3LLH6

4/14

DocID025864 Rev 3

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0 V, ID = -250 µA

-30

V

IDSS

Zero gate voltage

drain current

VGS = 0 V, VDS = -30 V

-1

µA

VGS = 0 V, VDS = -30 V,

TJ = 125 °C(1)

-10

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ±20 V

-100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = -250 µA

-1

-2.5

V

RDS(on)

Static drain-source

on- resistance

VGS = -10 V, ID = -2.5 A

48

56

mΩ

VGS = -4.5 V, ID = -2.5 A

75

90

mΩ

Notes:

(1)Defined by design, not subject to production test.

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = -25 V, f = 1 MHz,

VGS = 0 V

-

639

-

pF

Coss

Output capacitance

-

79

-

pF

Crss

Reverse transfer

capacitance

-

52

-

pF

Qg

Total gate charge

VDD = -15 V, ID = -5 A

VGS = -4.5 V

-

6

-

nC

Qgs

Gate-source charge

-

1.9

-

nC

Qgd

Gate-drain charge

-

2.1

-

nC

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = -15 V, ID = -5 A,

RG

= 4.7 Ω, VGS = -10 V

-

5.4

-

ns

tr

Rise time

-

5

-

ns

td(off)

Turn-off delay time

-

19.2

-

ns

tf

Fall time

-

3.4

-

ns