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STTH802SF 数据表(PDF) 2 Page - STMicroelectronics |
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STTH802SF 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short- circuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(AV) Average forward current, δ = 0.5 square pulse Tc = 145 °C 8 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 150 A Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature +175 °C Table 2. Thermal resistance parameters Symbol Parameter Typ. value Unit Rth(j-c) Junction to case 2.4 °C/W For more information, please refer to the following application note: • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 25 °C VR = VRRM - 6 µA Tj = 125 °C - 6 60 VF(2) Forward voltage drop Tj = 25 °C IF = 8 A - 0.94 1.08 V Tj = 125 °C - 0.79 0.91 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.77 x IF(AV) + 0.018 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses in a power diode Table 4. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25 °C IF = 1.0 A, dIF/dt = -50 A/µs, VR = 30 V - 35 ns IF = 1.0 A, dIF/dt = -100 A/µs, VR = 30 V - 17 22 IRM Reverse recovery current Tj = 125 °C IF = 8 A, dlF/dt = -200 A/µs, VR = 160 V - 5.8 7.5 A Qrr Reverse recovery charge - 100 nC STTH802SF Characteristics DS12649 - Rev 2 page 2/10 |
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