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STTH802SF 数据表(PDF) 4 Page - STMicroelectronics |
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STTH802SF 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Figure 5. Peak reverse recovery current versus dIF/dt (typical values) 0 2 4 6 8 10 12 0 100 200 300 400 500 dIF/dt(A/µs) IRM(A) IF = IF(AV) VR = 160 V Tj = 125 °C Figure 6. Reverse recovery time versus dIF/dt (typical values) 0 10 20 30 40 50 60 0 100 200 300 400 500 dIF/dt(A/µs) tRR(ns) IF = IF(AV) VR = 160 V Tj = 125 °C Figure 7. Reverse recovery charges versus dIF/dt (typical values) 0 20 40 60 80 100 120 140 160 180 0 100 200 300 400 500 dIF/dt(A/µs) QRR(nC) IF = IF(AV) VR = 160 V Tj = 125 °C Figure 8. Reverse recovery softness factor versus dIF/dt (typical values) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 100 200 300 400 500 dIF/dt(A/µs) SFACTOR IF = IF(AV) VR = 160 V Tj = 125 °C Figure 9. Relative variations of dynamic parameters versus junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 Tj(°C) IRM SFACTOR IF = IF(AV) VR = 160 V Reference: Tj = 125 °C QRR Figure 10. Junction capacitance versus reverse voltage applied (typical values) 10 100 1000 1 10 100 1000 VR(V) C(pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C STTH802SF Characteristics (curves) DS12649 - Rev 2 page 4/10 |
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