AP4407GR datasheet(1/4 Pages) A-POWER

部件名	AP4407GR

功能描述	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	4 Pages

Scroll/Zoom	100%

制造商	A-POWER [Advanced Power Electronics Corp.]

网页	http://www.a-power.com.tw

标志

1 / 4 page

Advanced Power

P-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼

▼ Lower On-resistance

BVDSS

-30V

▼

▼ Simple Drive Requirement

RDS(ON)

14mΩ

▼

▼ Fast Switching Characteristic

ID

-50A

Description

Absolute Maximum Ratings

Symbol

Units

VDS

V

VGS

V

ID@TC=25℃

A

ID@TC=100℃

A

IDM

A

PD@TA=25℃

W

W/℃

TSTG

℃

TJ

℃

Symbol

Value

Units

Rthj-c

Thermal Resistance Junction-case

Max.

2.3

℃/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

℃/W

Data and specifications subject to change without notice

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, VGS @ 10V

-55 to 150

Linear Derating Factor

54

-55 to 150

Thermal Data

Parameter

Total Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

Continuous Drain Current, VGS @ 10V

-32

Pulsed Drain Current

1

180

200218051

AP4407GR

Rating

-30

±25

-50

0.4

Pb Free Plating Product

G

D

S

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

G

D

S

TO-262(R)

类似零件编号 - AP4407GR

制造商	部件名	数据表	功能描述
Advanced Power Electron...	AP4407GM	72Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
VBsemi Electronics Co.,...	AP4407GM	996Kb / 9P	P-Channel 30-V (D-S) MOSFET
Advanced Power Electron...	AP4407GM-HF	213Kb / 5P	Simple Drive Requirement, Low On-resistance
VBsemi Electronics Co.,...	AP4407GM-HF	996Kb / 9P	P-Channel 30-V (D-S) MOSFET
SHENZHEN DOINGTER SEMIC...	AP4407GM-HF	1,001Kb / 5P	P-Channel MOSFET uses advanced trench technology

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