AP4407GR datasheet(2/4 Pages) A-POWER

2 / 4 page

AP4407GR

Electrical Characteristics@Tj=25

oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250uA

-30

ΔBV

DSS/ΔTj

Breakdown Voltage Temperature Coefficient

Reference to 25℃, ID=-1mA

-0.01

-V/℃

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-24A

mΩ

VGS=-4.5V, ID=-16A

mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-10V, ID=-24A

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=-30V, VGS=0V

-1

Drain-Source Leakage Current (Tj=150

oC)

VDS=-24V, VGS=0V

-25

IGSS

Gate-Source Leakage

VGS= ±25V

Total Gate Charge

ID=-24A

Qgs

Gate-Source Charge

VDS=-24V

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

td(on)

Turn-on Delay Time

VDS=-15V

Rise Time

ID=-24A

td(off)

Turn-off Delay Time

RG=3.3Ω,VGS=-10V

Fall Time

RD=0.63Ω

100

Ciss

Input Capacitance

VGS=0V

2120

3390

Coss

Output Capacitance

VDS=-25V

630

Crss

Reverse Transfer Capacitance

f=1.0MHz

550

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

IS=-24A, VGS=0V

-1.2

trr

Reverse Recovery Time

IS=-24A, VGS=0V,

Qrr

Reverse Recovery Charge

dI/dt=-100A/µs

Notes:

1.Pulse width limited by safe operating area.

2.Pulse width <300us , duty cycle <2%.

±100

AP4407GR 数据表(PDF) 2 Page - Advanced Power Electronics Corp.

AP4407GR 数据表(HTML) 2 Page - Advanced Power Electronics Corp.

Html Pages

1 2 3 4

数据表下载