1

Characteristics

Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified

Symbol

Parameter

Value

Unit

VDRM/VRRM

Repetitive peak off-state voltage (50-60 Hz)

Tj = 125 °C

1200

V

IT(RMS)

On-state RMS current (180° conduction angle)

Tc = 102 °C

25

A

IT(AV)

Average on-state current (180° conduction angle)

16

ITSM

Non repetitive surge peak on-state current

tp = 8.3 ms

314

A

tp = 10 ms

300

I2t

I2t value for fusing

tp = 10 ms

450

A2s

dl/dt

IG = 2 x IGT, tr ≤ 100 ns

Critical rate of rise of on-state current

f = 60 Hz

50

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

4

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

°C

Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)

Symbol

Test conditions

Value

Unit

IGT

VD = 12 V, RL = 33 Ω

Min.

4

mA

Max.

40

VGT

Max.

1.3

V

VGD

VD = VDRM, RL = 3.3 kΩ

Tj = 125 °C

Min.

0.2

V

IH

IT = 500 mA, gate open

Max.

80

mA

IL

IG = 1.2 x IGT

Max.

90

mA

dV/dt

VD = 67 % VDRM, gate open

Tj = 125 °C

Min.

1500

V/µs

Table 3. Static electrical characteristics

Symbol

Test conditions

Value

Unit

VTM

ITM = 50 A, tp = 380 µs

Tj = 25 °C

Max.

1.60

V

VTO

Threshold voltage

Tj = 125 °C

Max.

0.85

RD

Dynamic resistance

Tj = 125 °C

Max.

14

mΩ

IDRM, IRRM

VOUT = 1200 V

Tj = 25 °C

Max.

10

µA

Tj = 125 °C

6

mA

TN2540-12G

Characteristics

DS12791 - Rev 1

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