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TN2540-12G 数据表(PDF) 4 Page - STMicroelectronics |
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TN2540-12G 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Figure 5. Relative variation of gate trigger and holding current versus junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 -40 -20 0 20 40 60 80 100 120 140 Tj(°C) I GT, IH , IL[Tj]/IGT, IH , IL[Tj = 25 °C] IH & I L IGT Figure 6. Surge peak on-state current versus number of cycles 0 50 100 150 200 250 300 350 1 10 100 1000 Number of cycles I TSM(A) Non repetitive Tj initial = 25 °C Repetitive TC = 102 °C Figure 7. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms 100 1000 10000 0.01 0.10 1.00 10.00 tP(ms) I TSM(A) dI/dt limitation: 50 A/µs ITSM Tj initial = 25 °C Figure 8. On-state characteristics (maximum values) 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VTM (V) ITM (A) Tj max : Vto = 0.85V Rd = 14mΩ TN2540-12G Characteristics (curves) DS12791 - Rev 1 page 4/10 |
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