APT11044JFLL

1100V 22A 0.440

Ω

Ω

Ω

Ω

Ω

G

D

S

SOT-227

G

S

S

D

"UL Recognized"

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• Popular SOT-227 Package

Power MOS 7

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7

DS(ON)

and Q

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

POWER MOS 7

R

FREDFET

MAXIMUM RATINGS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

(V

GS

= 10V, 11A)

Zero Gate Voltage Drain Current (V

DS

= 1100V, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 880V, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 2.5mA)

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

1

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

µA

nA

Volts

MIN

TYP

MAX

1100

0.440

250

1000

±100

35

APT11044JFLL

1100

22

88

±30

±40

521

4.17

-55 to 150

300

22

50

3000