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APT11044JFLL 数据表(PDF) 2 Page - Advanced Power Technology

部件名 APT11044JFLL
功能描述  POWER MOS 7 FREDFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ADPOW [Advanced Power Technology]
网页  http://www.advpowertech.com
标志 ADPOW - Advanced Power Technology

APT11044JFLL 数据表(HTML) 2 Page - Advanced Power Technology

  APT11044JFLL Datasheet HTML 1Page - Advanced Power Technology APT11044JFLL Datasheet HTML 2Page - Advanced Power Technology APT11044JFLL Datasheet HTML 3Page - Advanced Power Technology APT11044JFLL Datasheet HTML 4Page - Advanced Power Technology APT11044JFLL Datasheet HTML 5Page - Advanced Power Technology  
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DYNAMIC CHARACTERISTICS
APT11044JFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -22A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -22A, di/dt = 100A/µs)
Reverse Recovery Charge
(IS = -22A, di/dt = 100A/µs)
Peak Recovery Current
(IS = -22A, di/dt = 100A/µs)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
µC
Amps
MIN
TYP
MAX
22
88
1.3
18
Tj = 25°C
320
Tj = 125°C
650
Tj = 25°C
3.60
Tj = 125°C
9.72
Tj = 25°C
16.5
Tj = 125°C
24.7
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.24
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 12.40mH, RG = 25Ω, Peak IL = 22A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-22A di/dt ≤ 700A/µs V
R ≤
1100
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 550V
I
D
= 22A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 550V
I
D
= 22A @ 25°C
R
G
= 0.6
Ω
INDUCTIVE SWITCHING @ 25°C
V
DD
= 733V, V
GS
= 15V
I
D
= 22A, R
G
= 5
Ω
INDUCTIVE SWITCHING @ 125°C
V
DD
= 733V V
GS
= 15V
I
D
= 22A, R
G
= 5
Ω
MIN
TYP
MAX
5643
828
153
180
32
111
18
9
45
14
961
581
1812
899
UNIT
pF
nC
ns
µJ
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05



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