VS-VSKU162...PbF, VS-VSKV162...PbF Series

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Vishay Semiconductors

Revision: 27-Jul-2018

2

Document Number: 95901

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ON-STATE CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current

at case temperature

IT(AV)

180° conduction, half sine wave

160

A

85

°C

Maximum RMS on-state current

IT(RMS)

As AC switch

355

A

Maximum peak, one-cycle



on-state, non-repetitive



surge current

ITSM

t = 10 ms

No voltage



reapplied

Sine half wave,



initial TJ = 

TJ maximum

4870

t = 8.3 ms

5100

t = 10 ms

100 % VRRM 

reapplied

4100

t = 8.3 ms

4300

Maximum I2t for fusing

I2t

t = 10 ms

No voltage



reapplied

119

kA2s

t = 8.3 ms

108

t = 10 ms

100 % VRRM 

reapplied

84

t = 8.3 ms

76.7

Maximum I2

t for fusing

I2

t

t = 0.1 ms to 10 ms, no voltage reapplied

1190

kA2

s

Low level value of threshold voltage

VT(TO)1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ maximum

0.8

V

High level value of threshold voltage

VT(TO)2

(I >

 x I

T(AV)), TJ maximum

0.98

Low level value on-state



slope resistance

rt1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ maximum

1.67

m



High level value on-state



slope resistance

rt2

(I >

 x I

T(AV)), TJ maximum

1.38

Maximum on-state voltage drop

VTM

ITM =  x IT(AV), TJ = 25 °C, 180° conduction

1.54

V

Maximum forward voltage drop

VFM

ITM =  x IT(AV), TJ = 25 °C, 180° conduction

1.54

V

Maximum holding current

IH

Anode supply = 6 V initial IT = 30 A, TJ = 25 °C

200

mA

Maximum latching current

IL

Anode supply = 6 V resistive load = 1



Gate pulse: 10 V, 100 μs, TJ = 25 °C

400

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Typical delay time

tgd

TJ = 25 °C

Gate current = 1 A, dlg/dt = 1 A/μs

Vd = 0.67 % VDRM

1

μs

Typical rise time

tgr

2

Typical turn-off time

tq

ITM = 300 A, - dl/dt = 15 A/μs; TJ = TJ maximum

VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 

50 to 200

BLOCKING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak reverse and



off-state leakage current

IRRM,

IDRM

TJ = 125 °C

50

mA

RMS insulation voltage

VINS

50 Hz, circuit to base,



all terminals shorted, t = 1 s

3500

V

Critical rate of rise of



off-state voltage

dV/dt

TJ = TJ maximum,

exponential to 67 % rated VDRM

1000

V/μs