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VS-VSKU162...PBF 数据表(PDF) 3 Page - Vishay Siliconix |
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VS-VSKU162...PBF 数据表(HTML) 3 Page - Vishay Siliconix |
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3 / 9 page ![]() VS-VSKU162...PbF, VS-VSKV162...PbF Series www.vishay.com Vishay Semiconductors Revision: 27-Jul-2018 3 Document Number: 95901 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power PGM tp 5 ms, TJ = TJ maximum 12 W Maximum average gate power PG(AV) f = 50 Hz, TJ = TJ maximum 3 Maximum peak gate current IGM tp 5 ms, TJ = TJ maximum 3A Maximum peak negative gate voltage - VGT 10 V Maximum required DC gate voltage to trigger VGT TJ = - 40 °C Anode supply = 6 V, resistive load; Ra = 1 4 TJ = 25 °C 2.5 TJ = TJ maximum 1.7 Maximum required DC gate current to trigger IGT TJ = - 40 °C 270 mA TJ = 25 °C 150 TJ = TJ maximum 80 Maximum gate voltage that will not trigger VGD TJ = TJ maximum, rated VDRM applied 0.3 V Maximum gate current that will not trigger IGD 10 mA Maximum rate of rise of turned-on current dI/dt TJ = TJ maximum, ITM = 400 A rated VDRM applied 300 A/μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range TJ -40 to +125 °C Maximum storage temperature range TStg -40 to +150 Maximum thermal resistance, junction to case per junction RthJC DC operation 0.16 K/W Maximum thermal resistance, case to heat sink per module RthCS Mounting surface, smooth, flat and greased 0.05 Mounting torque ± 10 % IAP to heat sink A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 4 to 6 Nm busbar to IAP Approximate weight 200 g 7.1 oz. Case style INT-A-PAK R CONDUCTION PER JUNCTION DEVICES SINUSOIDAL CONDUCTION AT TJ MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° VS-VSK.162 0.0030 0.0031 0.0032 0.0033 0.0034 0.0029 0.0036 0.0039 0.0041 0.0040 K/W |
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