DF2S5M4FS

4

7.

7.

7.

7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25

= 25

= 25

= 25 





))))

Characteristics

Electrostatic discharge voltage (IEC61000-4-2) (Contact)

Electrostatic discharge voltage (IEC61000-4-2) (Air)

Electrostatic discharge voltage (ISO10605) (Contact)

Electrostatic discharge voltage (ISO10605) (Air)

Peak pulse power (tp = 8/20 µs)

Peak pulse current (tp = 8/20 µs)

Junction temperature

Storage temperature

Symbol

VESD

PPK

IPP

Tj

Tstg

Note

(Note 1)

(Note 2)

(Note 3)

Rating

±20

±30

30

2

150

-55 to 150

Unit

kV

kV

W

A





Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: According to IEC61000-4-2.

Note 2: According to ISO10605.

Note 3: According to IEC61000-4-5.

2019-11-01

Rev.2.0

©2019

Toshiba Electronic Devices & Storage Corporation