DF2S5M4FS

5

8.

8.

8.

8. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25

= 25 





))))

VRWM: Working peak reverse voltage

VBR: Reverse breakdown voltage

IBR: Reverse breakdown current

IR: Reverse current

VC: Clamp voltage

IPP: Peak pulse current

RDYN: Dynamic resistance

IF: Forward current

VF: Forward voltage

Fig.

Fig.

Fig.

Fig. 8.1

8.1

8.1

8.1 Definitions of Electrical Characteristics

Definitions of Electrical Characteristics

Definitions of Electrical Characteristics

Definitions of Electrical Characteristics

Characteristics

Working peak reverse voltage

Total capacitance

Dynamic resistance

Reverse breakdown voltage

Reverse current

Clamp voltage

Symbol

VRWM

Ct

RDYN

VBR

IR

VC

Note

(Note 1)

(Note 2)

(Note 3)

(Note 2)

Test Condition



VR = 0 V, f = 1 MHz



IBR = 1 mA

VRWM = 3.6 V

IPP = 1 A

IPP = 2 A

ITLP = 16 A

ITLP = 30 A

Min







3.7











Typ.



0.45

0.35

4.3



6.8

8.3

13.5

23

Max

3.6

0.55



5.5

0.1



15





Unit

V

pF

Ω

V

µA

V

V

Note 1: Recommended operating condition.

Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of

dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8 A and IPP2 = 16 A.

Note 3: Based on IEC61000-4-5 8/20 µs pulse.

2019-11-01

Rev.2.0

©2019

Toshiba Electronic Devices & Storage Corporation