VS-ST223C..C Series

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Vishay Semiconductors

Revision: 13-Sep-17

6

Document Number: 93672

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Fig. 13 - Frequency Characteristics

Fig. 14 - Frequency Characteristics

Fig. 15 - Frequency Characteristics

1E 2

1E 3

1E 4

1 E 1

1 E2

1 E 3

1 E4

50 H z

400

2500

100

Pu lse Ba se w id t h ( µ s)

100 0

1500

3000

200

500

5000

ST223C.. C Series

Sinus o id a l p ulse

T

= 40°C

C

Snub b er c ircuit

R

= 4 7 o hm s

C

= 0. 22 µF

V

= 80 % V

s

s

D

DRM

tp

1000 0

1 E 11 E 2

1 E 31 E 4

50 H z

400

2500

100

Pu lse Ba se w id t h ( µ s)

1000

1500

3000

20 0

50 0

5000

ST223C.. C Se ries

Sinus o id a l p ulse

T

= 55°C

C

Snub b e r circ uit

R

= 4 7 o hm s

C

= 0.22 µF

V

= 80 % V

s

s

D

DRM

tp

10 00 0

1E 1

1E 1

1E 2

1E 3

1E 4

1E 1

1 E 2

1E 3

1 E 4

50 H z

400

2500

10 0

10 00

15 0 0

3000

200

500

P u lse B ase w idt h ( µ s)

ST22 3C ..C Se rie s

Tra p e zoidal pulse

T

= 40°C

di/d t = 5 0A /µ s

C

Snu b b e r c irc uit

R

= 4 7 o hm s

C

= 0.22 µF

V

= 80% V

s

s

D

DRM

5000

tp

10 0 00

1E 1

1 E 2

1 E 3

1 E 4

50 H z

400

2500

100

Pu lse Ba se w id t h ( µ s)

10 00

1500

200

500

ST2 23 C..C Series

Tra p e zoid a l p ulse

T

= 55°C

d i/d t = 50A /µs

C

Snubbe r circ uit

R

= 4 7 o hm s

C

= 0.22 µF

V

= 8 0 % V

s

s

D

DRM

3000

tp

5000

10000

1E 1

1E 2

1E 3

1E 4

1 E 1

1 E2

1 E 3

1 E4

50 H z

400

25 0 0

10 0

1000

1500

3000

20 0

500

P u lse B ase w id t h ( µ s)

Snub b er c ircu it

R

= 47 o hm s

C

= 0 .22 µF

V

= 80 % V

s

s

D

DRM

ST223 C. .C Se ries

Tra p ezo id a l p ulse

T

= 40°C

di/d t = 1 00A /µs

5000

C

tp

10000

1E 1

1 E 2

1 E 3

1 E 4

50 H z

400

2500

100

Pu lse Ba se w id t h ( µ s)

1000

1500

200

500

ST223 C. .C Se ries

Tra p ezo id a l p uls e

T

= 55°C

d i/d t = 10 0A /µs

C

Snubbe r circ uit

R

= 4 7 o hm s

C

= 0.2 2 µF

V

= 80% V

s

s

D

DRM

3000

tp

5000

10 00 0