VS-ST223C..C Series

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Vishay Semiconductors

Revision: 13-Sep-17

2

Document Number: 93672

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CURRENT CARRYING CAPABILITY

FREQUENCY

UNITS

50 Hz

930

800

1430

1220

5870

5240

A

400 Hz

910

770

1490

1300

3120

2740

1000 Hz

780

650

1430

1260

1880

1640

2500 Hz

490

400

1070

920

1000

860

Recovery voltage Vr

50

50

50

V

Voltage before turn-on Vd

VDRM

VDRM

VDRM

Rise of on-state current dI/dt

50

-

-

A/μs

Heatsink temperature

4055

40554055

°C

Equivalent values for RC circuit

47/0.22

47/0.22

47/0.22

μF

ON-STATE CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current



at heatsink temperature

IT(AV)

180° conduction, half sine wave



Double side (single side) cooled

390 (150)

A

55 (85)

°C

Maximum RMS on-state current

IT(RMS)

DC at 25 °C heatsink temperature double side cooled

745

A

Maximum peak, one half cycle,



non-repetitive surge current

ITSM

t = 10 ms

No voltage



reapplied

Sinusoidal half wave,



initial TJ = TJ maximum

5850

t = 8.3 ms

6130

t = 10 ms

100 % VRRM 

reapplied

4920

t = 8.3 ms

5150

Maximum I2t for fusing

I2t

t = 10 ms

No voltage



reapplied

171

kA2s

t = 8.3 ms

156

t = 10 ms

100 % VRRM

reapplied

121

t = 8.3 ms

110

Maximum I2

t for fusing

I2

t

t = 0.1 to 10 ms, no voltage reapplied

1710

kA2

s

Maximum peak on-state voltage

VTM

ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse

1.58

V

Low level value of threshold voltage

VT(TO)1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ = TJ maximum

1.05

High level value of threshold voltage

VT(TO)2

(I >

 x I

T(AV)), TJ = TJ maximum

1.09

Low level value of forward slope resistance

rt1

(16.7 % x

 x I

T(AV) < I <  x IT(AV)), TJ = TJ maximum

0.88

m



High level value of forward slope

resistance

rt2

(I >

 x I

T(AV)), TJ = TJ maximum

0.82

Maximum holding current

IH

TJ = 25 °C, IT > 30 A

600

mA

Typical latching current

IL

TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A

1000

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

MIN.

MAX.

Maximum non-repetitive rate



of rise of turned on current

dI/dt

TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt

1000

A/μs

Typical delay time

td

TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs

Resistive load, gate pulse: 10 V, 5

 source

0.78

μs

Maximum turn-off time

tq

TJ = TJ maximum, 

ITM = 300 A, commutating dI/dt = 20 A/μs

VR = 50 V, tp = 500 μs, dV/dt: See table in device code

10

30

180° el

I

TM

180° el

I

TM

100 µs

I

TM