APTGF200U60D4 datasheet(2/5 Pages) ADPOW

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APTGF200U60D4

APT website – http://www.advancedpower.com

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All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Tj = 25°C

500

µA

ICES

Zero Gate Voltage Collector Current

VGE = 0V

VCE = 600V

Tj = 125°C

Tj = 25°C

1.95

2.45

VCE(on)

Collector Emitter on Voltage

VGE = 15V

IC = 200A

Tj = 125°C

2.2

VGE(th)

Gate Threshold Voltage

VGE = VCE, IC = 4mA

4.5

5.5

6.5

IGES

Gate – Emitter Leakage Current

VGE = 20V, VCE = 0V

400

Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Cies

Input Capacitance

Cres

Reverse Transfer Capacitance

VGE = 0V, VCE = 25V

f = 1MHz

0.8

Td(on)

Turn-on Delay Time

163

Rise Time

Td(off)

Turn-off Delay Time

253

Fall Time

Inductive Switching (25°C)

VGE = ±15V

VBus = 300V

IC = 200A

RG = 1.5Ω

Td(on)

Turn-on Delay Time

183

Rise Time

Td(off)

Turn-off Delay Time

285

Fall Time

Eon

Turn on Energy

4.6

Eoff

Turn off Energy

Inductive Switching (125°C)

VGE = ±15V

VBus = 300V

IC = 200A

RG = 1.5Ω

6.3

Reverse diode ratings and characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

VRRM

Maximum Peak Repetitive Reverse Voltage

600

Tj = 25°C

250

IRM

Maximum Reverse Leakage Current

VR=600V

Tj = 125°C

500

µA

Tj = 25°C

1.25

1.6

Diode Forward Voltage

IF = 200A

VGE = 0V

Tj = 125°C

1.2

Reverse Recovery Energy

Tj = 125°C

4.1

Tj = 25°C

Qrr

Reverse Recovery Charge

IF = 200A

VR = 300V

di/dt

=4000A/µs

Tj = 125°C

µC

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