6.11 Electrical Characteristics: ADC (Temperature and Cell Measurement) Characteristics

(continued)

TA = –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at TA = 25°C and REG25 = 2.5 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

Ilkg(ADC)

Input leakage current(1)

0.3

µA

(1)

Specified by design. Not tested in production.

6.12 Electrical Characteristics: Data Flash Memory Characteristics

TA = –40°C to 85°C, 2.4 V < REG25 < 2.6 V; Typical Values at TA = 25°C and REG25 = 2.5 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX UNIT

tDR

Data retention(1)

10

Years

Flash-programming write cycles(1)

20,000

Cycles

tWORDPROG

Word programming time(1)

2

ms

ICCPROG

Flash-write supply current(1)

5

10

mA

(1)

Specified by design. Not tested in production.

6.13 Timing Requirements: HDQ Communication

TA = –40°C to 85°C, 2.45 V < VREGIN = VBAT < 5.5 V; typical values at TA = 25°C and VREGIN = VBAT = 3.6 V (unless otherwise

noted)

PARAMETER

TEST CONDITIONS

MIN

NOM

MAX

UNIT

t(CYCH)

Cycle time, host to BQ34Z100-R2

190

μs

t(CYCD)

Cycle time, BQ34Z100-R2 to host

190

205

250

μs

t(HW1)

Host sends 1 to BQ34Z100-R2

0.5

50

μs

t(DW1)

BQ34Z100-R2 sends 1 to host

32

50

μs

t(HW0)

Host sends 0 to BQ34Z100-R2

86

145

μs

t(DW0)

BQ34Z100-R2 sends 0 to host

80

145

μs

t(RSPS)

Response time, BQ34Z100-R2 to host

190

950

μs

t(B)

Break time

190

μs

t(BR)

Break recovery time

40

μs

t(RISE)

HDQ line rising time to logic 1 (1.2 V)

950

ns

t(RST)

HDQ Reset

1.8

2.2

s

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BQ34Z100-R2

SLUSF37 – DECEMBER 2022

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